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r10ds0014ej0200 rev.2.00 page 1 of 34 october 6, 2011 datasheet pd44164182b pd44164362b 18m-bit ddr ii sram 2-word burst operation description the pd44164182b is a 1,048,576-word by 18-bit and the pd44164362b is a 524,288-word by 36-bit synchronous double data rate static ram fabricated with advanced cmos technology using full cmos six- transistor memory cell. the pd44164182b and pd44164362b integrate unique synchronous peripheral circuitry and a burst counter. all input registers controlled by an input clock pair (k and k#) are latched on the positive edge of k and k#. these products are suitable for application wh ich require synchronous operation, high speed, low voltage, high density and wide b it configuration. these products are packaged in 165-pin plastic bga. features ? 1.8 0.1 v power supply ? 165-pin plastic bga (13 x 15) ? hstl interface ? pll circuitry for wide output data va lid window and future frequency scaling ? pipelined double data rate operation ? common data input/output bus ? two-tick burst for low ddr transaction size ? two input clocks (k and k#) for precise ddr timing at clock rising edges only ? two output clocks (c and c#) for precise flight time and clock skew matching-clock and da ta delivered together to receiving device ? internally self-timed write control ? clock-stop capability. normal operation is restored in 20 s after clock is resumed. ? user programmable impedance output (35 to 70 ) ? fast clock cycle time : 3.3 ns (300 mhz), 3.5 ns (287 mhz), 4.0 ns (250 mhz), 5.0 ns (200 mhz) ? simple control logic for easy depth expansion ? jtag 1149.1 compatible test access port r10ds0014ej0200 rev.2.00 october 6, 2011
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 2 of 34 october 6, 2011 ordering information part no. organization (word x bit) cycle time clock frequency operating ambient temperature package pd44164182bf5-e33-eq3-a 1m x 18 3.3ns 300mhz ta = 0 to 70 c 165-pin pd44164182bf5-e35-eq3-a 3.5ns 287mhz plastic bga pd44164182bf5-e40-eq3-a 4. 0ns 250mhz (13 x 15) pd44164182bf5-e50-eq3-a 5.0ns 200mhz lead-free pd44164362bf5-e33-eq3-a 512k x 36 3.3ns 300mhz PD44164362BF5-E35-EQ3-A 3.5ns 287mhz pd44164362bf5-e40-eq3-a 4.0ns 250mhz pd44164362bf5-e50-eq3-a 5.0ns 200mhz pd44164182bf5-e33-eq3 1m x 18 3.3ns 300mhz ta = 0 to 70 c 165-pin pd44164182bf5-e35-eq3 3.5ns 287mhz plastic bga pd44164182bf5-e40-eq3 4. 0ns 250mhz (13 x 15) pd44164182bf5-e50-eq3 5.0ns 200mhz lead pd44164362bf5-e33-eq3 512k x 36 3.3ns 300mhz pd44164362bf5-e35-eq3 3.5ns 287mhz pd44164362bf5-e40-eq3 4.0ns 250mhz pd44164362bf5-e50-eq3 5.0ns 200mhz pd44164182bf5-e33y-eq3-a 1m x 18 3.3ns 300mhz ta = ? 40 to 85 c 165-pin pd44164182bf5-e35y-eq3-a 3.5ns 287mhz plastic bga pd44164182bf5-e40y-eq3-a 4.0ns 250mhz (13 x 15) pd44164182bf5-e50y-eq3-a 5.0ns 200mhz lead-free pd44164362bf5-e33y-eq3-a 512k x 36 3.3ns 300mhz pd44164362bf5-e35y-eq3-a 3.5ns 287mhz pd44164362bf5-e40y-eq3-a 4.0ns 250mhz pd44164362bf5-e50y-eq3-a 5.0ns 200mhz pd44164182bf5-e33y-eq3 1m x 18 3.3ns 300mhz ta = ? 40 to 85 c 165-pin pd44164182bf5-e35y-eq3 3.5ns 287mhz plastic bga pd44164182bf5-e40y-eq3 4. 0ns 250mhz (13 x 15) pd44164182bf5-e50y-eq3 5.0ns 200mhz lead pd44164362bf5-e33y-eq3 512k x 36 3.3ns 300mhz pd44164362bf5-e35y-eq3 3.5ns 287mhz pd44164362bf5-e40y-eq3 4.0ns 250mhz pd44164362bf5-e50y-eq3 5.0ns 200mhz
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 3 of 34 october 6, 2011 pin arrangement 165-pin plastic bga (13 x 15) (top view) [ pd44164182b] 1m x 18 1 2 3 4 5 6 7 8 9 10 11 a cq# v ss /72m a r, w# bw1# k# nc/144m ld# a v ss /36m cq b nc dq9 nc a nc/288m k bw0# a nc nc dq8 c nc nc nc v ss a a0 a v ss nc dq7 nc d nc nc dq10 v ss v ss v ss v ss v ss nc nc nc e nc nc dq11 v dd q v ss v ss v ss v dd q nc nc dq6 f nc dq12 nc v dd q v dd v ss v dd v dd q nc nc dq5 g nc nc dq13 v dd q v dd v ss v dd v dd q nc nc nc h dll# v ref v dd q v dd q v dd v ss v dd v dd qv dd q v ref zq j nc nc nc v dd q v dd v ss v dd v dd q nc dq4 nc k nc nc dq14 v dd q v dd v ss v dd v dd q nc nc dq3 l nc dq15 nc v dd q v ss v ss v ss v dd q nc nc dq2 m nc nc nc v ss v ss v ss v ss v ss nc dq1 nc n nc nc dq16 v ss a a a v ss nc nc nc p nc nc dq17 a a c a a nc nc dq0 r tdo tck a a a c# a a a tms tdi a0, a : address inputs tms : ieee 1149.1 test input dq0 to dq17 : data inputs / output s tdi : ieee 1149 .1 test input ld# : synchronous load tck : ieee 1149.1 clock input r, w# : read write input td o : ieee 1149.1 test output bw0#, bw1# : byte write data select v ref : hstl input reference input k, k# : input clock v dd : power supply c, c# : output clock v dd q : power supply cq, cq# : echo clock v ss : ground zq : output impedance matching nc : no connection dll# : pll disable nc/xxm : expansion address for xxmb remarks 1. # indicates active low. 2. refer to package dimensions for the index mark. 3. 2a, 7a, 10a and 5b are expansion addresses ?? : 10a for 36mb : 10a and 2a for 72mb : 10a, 2a and 7a for 144mb : 10a, 2a, 7a and 5b for 288mb 2a and 10a of this product can also be used as nc.
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 4 of 34 october 6, 2011 pin arrangement 165-pin plastic bga (13 x 15) (top view) [ pd44164362b] 512k x 36 1 2 3 4 5 6 7 8 9 10 11 a cq# v ss /144m nc/36m r, w# bw2# k# bw1# ld# a v ss /72m cq b nc dq27 dq18 a bw3# k bw0# a nc nc dq8 c nc nc dq28 v ss a a0 a v ss nc dq17 dq7 d nc dq29 dq19 v ss v ss v ss v ss v ss nc nc dq16 e nc nc dq20 v dd q v ss v ss v ss v dd q nc dq15 dq6 f nc dq30 dq21 v dd q v dd v ss v dd v dd q nc nc dq5 g nc dq31 dq22 v dd q v dd v ss v dd v dd q nc nc dq14 h dll# v ref v dd q v dd q v dd v ss v dd v dd qv dd q v ref zq j nc nc dq32 v dd q v dd v ss v dd v dd q nc dq13 dq4 k nc nc dq23 v dd q v dd v ss v dd v dd q nc dq12 dq3 l nc dq33 dq24 v dd q v ss v ss v ss v dd q nc nc dq2 m nc nc dq34 v ss v ss v ss v ss v ss nc dq11 dq1 n nc dq35 dq25 v ss a a a v ss nc nc dq10 p nc nc dq26 a a c a a nc dq9 dq0 r tdo tck a a a c# a a a tms tdi a0, a : address inputs tms : ieee 1149.1 test input dq0 to dq35 : data inputs / output s tdi : ieee 1149 .1 test input ld# : synchronous load tck : ieee 1149.1 clock input r, w# : read write input td o : ieee 1149.1 test output bw0# to bw3# : byte write data select v ref : hstl input reference input k, k# : input clock v dd : power supply c, c# : output clock v dd q : power supply cq, cq# : echo clock v ss : ground zq : output impedance matching nc : no connection dll# : pll disable nc/xxm : expansion address for xxmb remarks 1. # indicates active low. 2. refer to package dimensions for the index mark. 3. 2a, 3a and 10a are expansion addresses : 3a for 36mb : 3a and 10a for 72mb : 3a, 10a and 2a for 144mb 2a and 10a of this product can also be used as nc.
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 5 of 34 october 6, 2011 pin description (1/2) symbol type description a0 a input synchronous address inputs: these inputs are registered and must meet the setup and hold times around the rising edge of k. all transactions operate on a burst of two words (one clock period of bus activity). a0 is used as the lowest order address bit permitting a random starting address with in the burst operation on x18 and x36 devices. these inputs are ignored when dev ice is deselected, i.e., nop (ld# = high). dq0 to dqxx input/output synchronous data ios: input data must meet se tup and hold times around the rising edges of k and k#. output data is synchr onized to the respective c and c# data clocks or to k and k# if c and c# are tied to high. x18 device uses dq0 to dq17. x36 device uses dq0 to dq35. ld# input synchronous load: this input is brought low when a bus cycle sequence is to be defined. this definition includes address and read/write direction. all transactions operate on a burst of 2 data (one cl ock period of bus activity). r, w# input synchronous read/write input: when ld# is low, this input designates the access type (read when r, w# is high, write when r, w# is low) for the loaded address. r, w# must meet t he setup and hold times around the rising edge of k. bwx# input synchronous byte writes: when low these in puts cause their respective byte to be registered and written during write cycles . these signals must meet setup and hold times around the rising edges of k and k# for each of the two rising edges comprising the write cycle. see pin arrangement for signal to data relationships. x18 device uses bw0#, bw1#. x36 device uses bw0# to bw3#. see byte write operation for relation between bwx# and dxx. k, k# input input clock: this input clock pair regist ers address and control inputs on the rising edge of k, and registers data on the rising edge of k and the rising edge of k#. k# is ideally 180 degrees out of phase with k. all synchronous inputs must meet setup and hold times around the clock rising edges. c, c# input output clock: this cl ock pair provides a user controlled means of tuning device output data. the rising edge of c# is used as the output timing refe rence for first output data. the rising edge of c is used as the output reference for se cond output data. ideally, c# is 180 degrees out of phase with c. when use of k and k# as the reference instead of c and c#, then fixed c and c# to high. operation cannot be guaranteed unless c and c# are fixed to high (i.e. toggle of c and c#)
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 6 of 34 october 6, 2011 (2/2) symbol type description cq, cq# output synchronous echo clo ck outputs. the rising edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data valid indication. these signals run freely and do not stop when dq tristates. if c and c# are stopped (if k and k# are stopped in the single clock mode), cq and cq# will also stop. zq input output impedance matching input: this input is used to tune the device outputs to the system data bus impedance. dq, cq and cq# output impedance are set to 0.2 x rq, where rq is a resistor from this bump to ground. the output impedance can be minimized by directly connect zq to v dd q. this pin cannot be connected directly to gnd or left unconnected. the output impedance is adjusted every 20 s upon power-up to account for drifts in supply voltage and temper ature. after replacement for a resistor, the new output impedance is reset by implementing power-on sequence. dll# input pll disable: when debugging the system or board, the operation can be performed at a clock frequency slower than tkhkh (max.) with out the pll circuit being used, if dll# = low. the ac/dc characteristics cannot be guaranteed. for normal operation, dll# must be high and it can be connected to v dd q through a 10 k or less resistor. tms tdi input ieee 1149.1 test inputs: 1.8 v i/o level. these balls ma y be left not connected if the jtag function is not used in the circuit. tck input ieee 1149.1 clock input: 1.8 v i/o level. this pin must be tied to v ss if the jtag function is not used in the circuit. tdo output ieee 1149.1 test output: 1.8 v i/o level. when providing any external voltage to tdo signal, it is recommended to pull up to v dd . v ref ? v dd q/2. provides a reference voltage for the input buffers. v dd supply power supply: 1.8 v nominal. see recommended dc operating conditions and dc characteristics for range. v dd q supply power supply: isolated output buffer supply. nominally 1.5 v. 1.8 v is also permissible. see recommended dc operating conditions and dc characteristics for range. v ss supply power supply: ground nc ?
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 7 of 34 october 6, 2011 block diagram 2 : 1 mux 0 1 /a0' a0' /a0' a0' 0 1 input register e k# r, w#` input register e write address register e k r, w# register e output control logic c# c address register e ld# address a0'' a0''' compare output buffer zq dq output enable register c burst logic d0 q0 a0 clk a0' write register memory array write driver sense amps output register a0' clk k e a0''' r w#
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 8 of 34 october 6, 2011 power-on sequence in ddr ii sram ddr ii srams must be powered up and initialized in a predefined manner to prevent undefined operations. the following timing charts show the recommended power-on sequence. the following power-up supply voltage application is recommended: v ss , v dd , v dd q, v ref , then v in . v dd and v dd q can be applied simultaneously, as long as v dd q does not exceed v dd by more than 0.5 v during power-up. the following power-down supply voltage removal sequence is recommended: v in , v ref , v dd q, v dd , v ss . v dd and v dd q can be removed simultaneously, as long as v dd q does not exceed v dd by more than 0.5 v during power-down. power-on sequence apply power and tie dll# to high. - apply v dd before v dd q. - apply v dd q before v ref or at the same time as v ref . provide stable clock for more than 20 s to lock the pll. pll constraints the pll uses k clock as its synchronizing input and the in put should have low phase jitter which is specified as tkc var. the pll can cover 120 mhz as the lowest freq uency. if the input clock is unstable and the pll is enabled, then the pll may lock onto an undesired clock frequency. power-on waveforms dll# 20 s or more stable clock v dd /v dd q stable (< 0.1 v dc per 50 ns) fix high (or tied to v dd q) v dd /v dd q clock unstable clock normal operation start
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 9 of 34 october 6, 2011 burst sequence linear burst sequence table a0 a0 external address 0 1 1st internal burst address 1 0 truth table operation ld# r, w# clk dq write cycle l l l h data in load address, input write data on input data d(a1) d(a2) consecutive k and k# rising edge input clock k(t+1) k#(t+1) read cycle l h l h data out load address, read data on output data q(a1) q(a2) consecutive c and c# rising edge output clock c#(t+1) c(t+2) nop (no operation) h l h high-z clock stop stopped previous state remarks 1. h : high, l : low, : don?t care, : rising edge. 2. data inputs are registered at k and k# rising edges. data outputs are delivered at c and c# rising edges except if c and c# are high th en data outputs are delivered at k and k# rising edges. 3. all control inputs in the truth table must meet set up/hold times around the rising edge (low to high) of k. all control inputs are registered during the rising edge of k. 4. this device contains circuitry that ensure the outputs to be in high impedance during power-up. 5. refer to state diagram and timi ng diagrams for clarification. 6. a1 refers to the address input during a write or read cycle. a2 refers to the next internal burst address in accordance with the linear burst sequence. 7. it is recommended that k = k# = c = c# when clock is stopped. this is not essential but permits most rapid restart by overcoming transmission line charging symmetrically.
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 10 of 34 october 6, 2011 byte write operation [ pd44164182b] operation k k# bw0# bw1# write dq0 to dq17 l h ? 0 0 ? l h 0 0 write dq0 to dq8 l h ? 0 1 ? l h 0 1 write dq9 to dq17 l h ? 1 0 ? l h 1 0 write nothing l h ? 1 1 ? l h 1 1 remarks 1. h : high, l : low, : rising edge. 2. assumes a write cycle was initiated. bw0# and bw1# can be altered for any portion of the burst write operation provided that the setu p and hold requirements are satisfied. [ pd44164362b] operation k k# bw0# bw1# bw2# bw3# write dq0 to dq35 l h ? 0 0 0 0 ? l h 0 0 0 0 write dq0 to dq8 l h ? 0 1 1 1 ? l h 0 1 1 1 write dq9 to dq17 l h ? 1 0 1 1 ? l h 1 0 1 1 write dq18 to dq26 l h ? 1 1 0 1 ? l h 1 1 0 1 write dq27 to dq35 l h ? 1 1 1 0 ? l h 1 1 1 0 write nothing l h ? 1 1 1 1 ? l h 1 1 1 1 remarks 1. h : high, l : low, : rising edge. 2. assumes a write cycle was initiated. bw0# to bw 3# can be altered for any portion of the burst write operation provided that the setu p and hold requirements are satisfied.
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 11 of 34 october 6, 2011 bus cycle state diagram remarks 1. a0 is internally advanced in acco rdance with the burst order table. bus cycle is terminated after burst count = 2. 2. state machine control timing se quence is controlled by k. read double count = count + 2 write double count = count + 2 power up write nop supply voltage provided load new address count = 0 nop load, count = 2 read load, count = 2 load nop, count = 2 nop, count = 2
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 12 of 34 october 6, 2011 electrical characteristics absolute maximum ratings parameter symbol conditions rating unit supply voltage v dd ? 0.5 to + 2.5 v output supply voltage v dd q ? 0.5 to v dd v input voltage v in ? 0.5 to v dd + 0.5 (2.5 v max.) v input / output voltage v i/o ? 0.5 to v dd q + 0.5 (2.5 v max.) v operating ambient temperature t a (e** series) 0 to 70 c (e**y series) ? 40 to 85 storage temperature t stg ? 55 to + 125 c caution exposing the device to stress above those listed in absolute maximum ratings could cause permanent damage. the device is not meant to be operated under conditions outside the limits described in the operational section of this speci fication. exposure to absolute maximum rating conditions for extended periods may affect device reliability. recommended dc operating conditions (t a = 0 to 70 c, t a = ? 40 to 85 c) parameter symbol conditions mi n. typ. max. unit note supply voltage v dd 1.7 1.8 1.9 v output supply voltage v dd q 1.4 v dd v 1 input high voltage v ih (dc) v ref + 0.1 v dd q + 0.3 v 1, 2 input low voltage v il (dc) ? 0.3 v ref ? 0.1 v 1, 2 clock input voltage v in ? 0.3 v dd q + 0.3 v 1, 2 reference voltage v ref 0.68 0.95 v notes 1. during normal operation, v dd q must not exceed v dd . 2. power-up: v ih v dd q ? + 0.3 v and v dd 1.7 v and v dd q 1.4 v for t 200 ms recommended ac operating conditions (t a = 0 to 70 c, t a = ? 40 to 85 c) parameter symbol conditions min. max. unit note input high voltage v ih (ac) v ref + 0.2 v 1 input low voltage v il (ac) v ref ? 0.2 v 1 note 1. overshoot: v ih (ac) v dd + ? 0.7 v (2.5 v max.) for t tkhkh/2 undershoot: v il (ac) ? 0.5 v for t tkhkh/2 control input signals may not have pulse widths less th an tkhkl (min.) or operate at cycle rates less than tkhkh (min.).
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 13 of 34 october 6, 2011 dc characteristics 1 (t a = 0 to 70 c, v dd = 1.8 0.1 v) parameter symbol test condi tion min. max. unit note x18 x36 input leakage current i li ? 2 + 2 a i/o leakage current i lo ? 2 + 2 a operating supply current i dd v in v il or v in v ih , -e33 470 510 ma (read cycle / write cycle) i i/o = 0 ma, -e35 460 500 cycle = max. -e40 430 470 -e50 390 420 standby supply current i sb1 v in v il or v in v ih , -e33 410 430 ma (nop) i i/o = 0 ma, -e35 400 420 cycle = max. -e40 380 400 inputs static -e50 350 370 output high voltage v oh(low) |i oh | 0.1 ma v dd q ? 0.2 v dd q v 3, 4 v oh note1 v dd q/2 ? 0.12 v dd q/2 + 0.12 v 3, 4 output low voltage v ol(low) i ol 0.1 ma v ss 0.2 v 3, 4 v ol note2 v dd q/2 ? 0.12 v dd q/2 + 0.12 v 3, 4 notes 1. outputs are impedance-controlled. | i oh | = (v dd q/2)/(rq/5) 15% for values of 175 rq 350 . 2. outputs are impedance-controlled. i ol = (v dd q/2)/(rq/5) 15% for values of 175 rq 350 . 3. ac load current is higher than the shown dc values. 4. hstl outputs meet jedec hstl class i standards.
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 14 of 34 october 6, 2011 dc characteristics 2 (t a = ? 40 to 85 c, v dd = 1.8 0.1 v) parameter symbol test condi tion min. max. unit note x18 x36 input leakage current i li ? 2 + 2 a i/o leakage current i lo ? 2 + 2 a operating supply current i dd v in v il or v in v ih , -e33y 600 640 ma (read cycle / write cycle) i i/o = 0 ma, -e35y 590 630 cycle = max. -e40y 560 600 -e50y 520 550 standby supply current i sb1 v in v il or v in v ih , -e33y 530 550 ma (nop) i i/o = 0 ma, -e35y 520 540 cycle = max. -e40y 500 520 inputs static -e50y 470 490 output high voltage v oh(low) |i oh | 0.1 ma v dd q ? 0.2 v dd q v 3, 4 v oh note1 v dd q/2 ? 0.12 v dd q/2 + 0.12 v 3, 4 output low voltage v ol(low) i ol 0.1 ma v ss 0.2 v 3, 4 v ol note2 v dd q/2 ? 0.12 v dd q/2 + 0.12 v 3, 4 notes 1. outputs are impedance-controlled. | i oh | = (v dd q/2)/(rq/5) 15% for values of 175 rq 350 . 2. outputs are impedance-controlled. i ol = (v dd q/2)/(rq/5) 15% for values of 175 rq 350 . 3. ac load current is higher than the shown dc values. 4. hstl outputs meet jedec hstl class i standards.
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 15 of 34 october 6, 2011 capacitance (t a = 25 c, f = 1 mhz) parameter symbol test conditions min. max. unit input capacitance c in v in = 0 v 5 pf (address, control) input / output capacitance c i/o v i/o = 0 v 7 pf (dq, cq, cq#) clock input capacitance c clk v clk = 0 v 6 pf remark these parameters are periodically sampled and not 100% tested. thermal characteristics parameter symbol substrate airflow typ. unit thermal resistance ja 4-layer 0 m/s 21.4 c/w from junction to ambient air 1 m/s 13.6 c/w 8-layer 0 m/s 20.3 c/w 1 m/s 13.1 c/w thermal characterization parameter jt 4-layer 0 m/s 0.02 c/w from junction to the top center 1 m/s 0.06 c/w of the package surface 8-layer 0 m/s 0.02 c/w 1 m/s 0.06 c/w thermal resistance jc 2.65 c/w from junction to case
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 16 of 34 october 6, 2011 ac characteristics (t a = 0 to 70 c or t a = ? 40 to 85 c, v dd = 1.8 0.1 v) ac test conditions (v dd = 1.8 0.1 v, v dd q = 1.4 v to v dd ) input waveform (rise / fall time 0.3 ns) 0.75 v 0.75 v test points 1.25 v 0.25 v output waveform v dd q / 2 v dd q / 2 test points output load condition figure 1. external load at test v dd q / 2 0.75 v 50 z o = 50 250 sram v ref zq
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 17 of 34 october 6, 2011 read and write cycle parameter symbol -e33, e33y -e35, e 35y -e40, e40y -e50, e50y unit note (300 mhz) (287 mhz) (250 mhz) (200 mhz) min. max. min. max. min. max. min. max. clock average clock cycle time tkhkh 3.3 8.4 3.5 8.4 4.0 8.4 5.0 8.4 ns 1 (k, k#, c, c#) clock phase jitter (k, k#, c, c#) tkc var 0.2 0.2 0.2 0.2 ns 2 clock high time (k, k#, c, c#) tkhkl 1.32 1.5 1.6 2.0 ns clock low time (k, k#, c, c#) tklkh 1.32 1.5 1.6 2.0 ns clock high to clock# high tkhk#h 1.49 1.7 1.8 2.2 ns (k k#, c c#) clock# high to clock high tk#hkh 1.49 1.7 1.8 2.2 ns (k# k, c# c) clock to data clock tkhch 0 1.45 0 1.65 0 1.8 0 2.3 ns (k c, k# c#) pll lock time (k, c) tkc lock 20 20 20 20 s 3 k static to pll reset tkc reset 30 30 30 30 ns 4 output times cq high to cq# high tcqhcq#h 1.24 1.35 1.55 1.95 ns 5 (cq cq#) cq# high to cq high tcq#hcqh 1.24 1.35 1.55 1.95 ns 5 (cq# cq) c, c# high to output valid tchqv 0.45 0.45 0.45 0.45 ns c, c# high to output hold tchqx ? 0.45 ? 0.45 ? 0.45 ? 0.45 ns c, c# high to echo clock valid tchcqv 0.45 0.45 0.45 0.45 ns c, c# high to echo clock hold tchcqx ? 0.45 ? 0.45 ? 0.45 ? 0.45 ns cq, cq# high to output valid tc qhqv 0.27 0.3 0.3 0.35 ns 6 cq, cq# high to output hold tcqhqx ? 0.27 ? 0.3 ? 0.3 ? 0.35 ns 6 c high to output high-z tchqz 0.45 0.45 0.45 0.45 ns c high to output low-z tchqx1 ? 0.45 ? 0.45 ? 0.45 ? 0.45 ns setup times address valid to k rising edge tavkh 0.4 0.5 0.5 0.6 ns 7 synchronous load input (ld#), tivkh 0.4 0.5 0.5 0.6 ns 7 read write input (r, w#) valid to k rising edge data inputs and write data tdvkh 0.3 0.35 0.35 0.4 ns 7 select inputs (bwx#) valid to k, k# rising edge hold times k rising edge to address hold tkhax 0.4 0.5 0.5 0.6 ns 7 k rising edge to tkhix 0.4 0.5 0.5 0.6 ns 7 synchronous load input (ld#), read write input (r, w#) hold k, k# rising edge to data inputs tkhdx 0.3 0.35 0.35 0.4 ns 7 and write data select inputs (bwx#) hold
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 18 of 34 october 6, 2011 notes 1. when debugging the system or board, these products can operate at a clock fre quency slower than tkhkh (max.) without the pll circuit being used, if dll# = low. read latency (rl) is changed to 1.0 clock cycle in this operation. the ac/dc characteristics cannot be guaranteed, however. 2. clock phase jitter is the variance from clock rising e dge to the next expected clock rising edge. tkc var (max.) indicates a peak-to-peak value. 3. v dd slew rate must be less than 0.1 v dc per 50 ns for pll lock retention. pll lock time begins once v dd and input clock are stable. it is recommended that the device is kept nop (ld# = high) during these cycles. 4. k input is monitored for this operation. see below for the timing. k k tkc reset or tkc reset 5. guaranteed by design. 6. echo clock is very tightly controlled to data valid / data hold. by design, there is a 0.1 ns variation from echo clock to data. the data sheet parameters reflect tester guardbands and test setup variations. 7. this is a synchronous device. all addresses, data an d control lines must meet th e specified setup and hold times for all latching clock edges. remarks 1. this parameter is sampled. 2. test conditions as specified with the output loadin g as shown in ac test conditions unless otherwise noted. 3. control input signals may not be operated with pulse widths less than tkhkl (min.). 4. if c, c# are tied high, k, k# become the references for c, c# timing parameters. 5. v dd q is 1.5 v dc.
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 19 of 34 october 6, 2011 read and write timing tkhkh tkhax q00 q10 k ld# address dq q01 k# 24 6810 135 79 r, w# a0 a1 a2 qx2 q11 tkhk#h tk#hkh cq cq# c c# tkhch tchqx1 tchqv tchqv tchqx tchqz tkhkl tklkh tkhkh tkhk#h d20 d30 d21 d31 tdvkh tkhdx tdvkh tkhdx nop read (burst of 2) (burst of 2) (burst of 2) (burst of 2) (burst of 2) read nop nop write write tkhkl tivkh tkhix tchcqv tchcqv tchcqx tchcqx tcqhqx tcqhqv read a3 a4 tchqx q40 q41 tk#hkh tavkh tkhch tklkh tcq#hcqh tcqhcq#h remarks 1. q01 refers to output from address a0. q02 refers to output from the next internal burst address following a0, etc. 2. outputs are disabled (high impedance) 2.5 clock cycles after the last read (ld# = low, r, w# = high) is input in the se quences of [read]-[nop]. 3. the second nop cycle at the cycle ?5? is not necessary for correct device operation; however, at high clock frequencies it may be required to prevent bus contention.
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 20 of 34 october 6, 2011 application example sram controller data io address ld# r, w# bw# sram#1 cq/cq# sram#4 cq/cq# source clk/clk# return clk/clk# zq cq# cq sram#4 dq a ld# r, w# bwx# c/c# k/k# r r v t v t r v t r v t r v t r = 250 r = 250 zq cq# cq sram#1 dq a ld# r, w# bwx# c/c# k/k# r = 50 v t = v ref . . . . . . remark ac characteristics are defined at the condition of sram outputs, cq, cq# and dq with termination.
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 21 of 34 october 6, 2011 jtag specification these products support a limited set of jtag functions as in ieee standard 1149.1. test access port (tap) pins pin name pin assignments description tck 2r test clock input. all input are capt ured on the rising edge of tck and all outputs propagate from the falling edge of tck. tms 10r test mode select. this is the comm and input for the tap controller state machine. tdi 11r test data input. this is the input si de of the serial registers placed between tdi and tdo. the register placed between tdi and tdo is determined by the state of the tap controller state machine and the instru ction that is currently loaded in the tap instruction. tdo 1r test data output. this is the output si de of the serial registers placed between tdi and tdo. output changes in response to the falling edge of tck. remark the device does not have trst (tap reset). the test -logic reset state is entered while tms is held high for five rising edges of tck. the tap contro ller state is also reset on the sram power-up. jtag dc characteristics (t a = 0 to 70 c, v dd = 1.8 0.1 v, unless otherwise noted) parameter symbol conditions min. max. unit jtag input leakage current i li 0 v v in v dd ? 5.0 + 5.0 a jtag i/o leakage current i lo 0 v v in v dd q, ? 5.0 + 5.0 a outputs disabled jtag input high voltage v ih 1.3 v dd + 0.3 v jtag input low voltage v il ? 0.3 + 0.5 v jtag output high voltage v oh1 | i ohc | = 100 a 1.6 v v oh2 | i oht | = 2 ma 1.4 v jtag output low voltage v ol1 i olc = 100 a 0.2 v v ol2 i olt = 2 ma 0.4 v
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 22 of 34 october 6, 2011 jtag ac test conditions input waveform (rise / fall time 1 ns) 0.9 v 0.9 v test points 1.8 v 0 v output waveform 0.9 v 0.9 v test points output load figure 2. external load at test tdo z o = 50 v tt = 0.9 v 20 pf 50
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 23 of 34 october 6, 2011 jtag ac characteristics (t a = 0 to 70 c) parameter symbol conditions min. max. unit clock clock cycle time t thth 50 ns clock frequency f tf 20 mhz clock high time t thtl 20 ns clock low time t tlth 20 ns output time tck low to tdo unknown t tlox 0 ns tck low to tdo valid t tlov 10 ns setup time tms setup time t mvth 5 ns tdi valid to tck high t dvth 5 ns capture setup time t cs 5 ns hold time tms hold time t thmx 5 ns tck high to tdi invalid t thdx 5 ns capture hold time t ch 5 ns jtag timing diagram t thth t tlov t tlth t thtl t mvth t thdx t dvth t thmx tck tms tdi tdo t tlox
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 24 of 34 october 6, 2011 scan register definition (1) register name description instruction register the instruction register holds the instru ctions that are execut ed by the tap controller when it is moved into the run-test/idle or the various data register stat e. the register can be loaded when it is placed between the tdi and tdo pins. the instruction register is automatically preloaded with the idcode instruction at pow er-up whenever the controller is placed in test-logic-reset state. bypass register the bypass register is a single bit register that can be placed between tdi and tdo. it allows serial test data to be passed throug h the rams tap to another device in the scan chain with as little delay as possible. id register the id register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when the controller is put in capture- dr state with the idcode command loaded in the instruction register. t he register is then placed between the tdi and tdo pins when the controller is moved into shift-dr state. boundary register the boundary register, under the control of the tap contro ller, is loaded with the contents of the rams i/o ring when the controller is in capture-dr st ate and then is placed between the tdi and tdo pins when the controller is moved to shift-dr state. several tap instructions can be used to activate the boundary register. the scan exit order tables describe whic h device bump connects to each boundary register location. the first column defines the bit?s position in the boundary register. the second column is the name of the input or i/o at the bum p and the third column is the bump number. scan register definition (2) register name bit size unit instruction register 3 bit bypass register 1 bit id register 32 bit boundary register 107 bit id register definition part number organization id [31:28] vendor revision no. id [27:12] part no. id [11:1] vendor id no. id [0] fix bit pd44164182b 1m x 18 xxxx 0000 0000 0001 0011 00000010000 1 pd44164362b 512k x 36 xxxx 0000 0000 0001 0100 00000010000 1
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 25 of 34 october 6, 2011 scan exit order bit signal name bump bit signal name bump bit signal name bump no. x18 x36 id no. x18 x36 id no. x18 x36 id 1 c# 6r 37 nc 10d 73 nc 2c 2 c 6p 38 nc 9e 74 dq11 dq20 3e 3 a 6n 39 dq7 dq17 10c 75 nc dq29 2d 4 a 7p 40 nc dq16 11d 76 nc 2e 5 a 7n 41 nc 9c 77 nc 1e 6 a 7r 42 nc 9d 78 dq12 dq30 2f 7 a 8r 43 dq8 11b 79 nc dq21 3f 8 a 8p 44 nc dq7 11c 80 nc 1g 9 a 9r 45 nc 9b 81 nc 1f 10 dq0 11p 46 nc 10b 82 dq13 dq22 3g 11 nc dq9 10p 47 cq 11a 83 nc dq31 2g 12 nc 10n 48 ? internal 84 nc 1j 13 nc 9p 49 a 9a 85 nc 2j 14 dq1 dq11 10m 50 a 8b 86 dq14 dq23 3k 15 nc dq10 11n 51 a 7c 87 nc dq32 3j 16 nc 9m 52 a0 6c 88 nc 2k 17 nc 9n 53 ld# 8a 89 nc 1k 18 dq2 11l 54 nc bw1# 7a 90 dq15 dq33 2l 19 nc dq1 11m 55 bw0# 7b 91 nc dq24 3l 20 nc 9l 56 k 6b 92 nc 1m 21 nc 10l 57 k# 6a 93 nc 1l 22 dq3 11k 58 nc bw3# 5b 94 dq16 dq25 3n 23 nc dq12 10k 59 bw1# bw2# 5a 95 nc dq34 3m 24 nc 9j 60 r, w# 4a 96 nc 1n 25 nc 9k 61 a 5c 97 nc 2m 26 dq4 dq13 10j 62 a 4b 98 dq17 dq26 3p 27 nc dq4 11j 63 a nc 3a 99 nc dq35 2n 28 zq 11h 64 dll# 1h 100 nc 2p 29 nc 10g 65 cq# 1a 101 nc 1p 30 nc 9g 66 dq9 dq27 2b 102 a 3r 31 dq5 11f 67 nc dq18 3b 103 a 4r 32 nc dq14 11g 68 nc 1c 104 a 4p 33 nc 9f 69 nc 1b 105 a 5p 34 nc 10f 70 dq10 dq19 3d 106 a 5n 35 dq6 11e 71 nc dq28 3c 107 a 5r 36 nc dq15 10e 72 nc 1d
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 26 of 34 october 6, 2011 jtag instructions instructions description extest the extest instruction allows circuitry external to the component package to be tested. boundary-scan register cells at output pins are used to apply test vectors, while those at input pins capture test result s. typically, the first test vector to be applied using the extest instruction will be shifted into t he boundary scan register using the preload instruction. thus, during the update-ir state of extest, the output drive is turned on and the preload data is driven onto the output pins. idcode the idcode inst ruction causes the id rom to be lo aded into the id register when the controller is in capture-dr mode and places the id register between the tdi and tdo pins in shift-dr mode. the idcode instruction is the default instruction loaded in at power up and any time the controller is placed in the test-logic-reset state. bypass when the bypass instruction is loaded in the in struction register, the bypass register is placed between tdi and tdo. this occurs when the tap controller is moved to the shift- dr state. this allows the board level scan path to be shortened to fac ilitate testing of other devices in the scan path. sample / preload sample / preload is a standard 11 49.1 mandatory public in struction. when the sample / preload instruction is loaded in the instruction register, moving the tap controller into the capture-dr state loads the data in the rams input and dq pins into the boundary scan register. because the ram clo ck(s) are independent from the tap clock (tck) it is possible for the tap to attempt to capture the i/o ring cont ents while the input buffers are in transition (i.e., in a metastabl e state). although allowing the tap to sample metastable input will not harm the device, r epeatable results cannot be expected. ram input signals must be stabilized for long enough to meet the taps input data capture setup plus hold time (tcs plus tch). the rams clock inputs need not be paused for any other tap operation except capturing the i/o ring contents into the boundary scan register. moving the controller to shift-dr state then places the boundary scan register between the tdi and tdo p ins. sample-z if the sample-z instruction is loaded in t he instruction register, all ram dq pins are forced to an inactive drive state (high im pedance) and the boundary register is connected between tdi and tdo when the tap controlle r is moved to the shift-dr state. jtag instruction coding ir2 ir1 ir0 instruction note 0 0 0 extest 0 0 1 idcode 0 1 0 sample-z 1 0 1 1 reserved 2 1 0 0 sample / preload 1 0 1 reserved 2 1 1 0 reserved 2 1 1 1 bypass notes 1. tristate all dq pins and capture the pad values into a serial scan latch. 2. do not use this instruction code because th e vendor uses it to evaluate this product.
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 27 of 34 october 6, 2011 output pin states of cq, cq# and dq instructions control-register status output pin status cq,cq# dq extest 0 update high-z 1 update update idcode 0 sram sram 1 sram sram sample-z 0 high-z high-z 1 high-z high-z sample 0 sram sram 1 sram sram bypass 0 sram sram 1 sram sram remark the output pin statuses during each instruction vary according to the control-register status (value of boundary scan register, bit no. 107). there are three statuses: update : contents of the ?update register? are output to the output pin (ddr pad). sram : contents of the sram internal output ?sram output? are output to the output pin (ddr pad). high-z :the output pin (ddr pad) becomes high impedance by controlling of the ?high-z jtag ctrl?. the control-register status is set during update-dr at the extest or sample instruction. sram capture register boundary scan register update register ddr pad sram output driver high-z jtag ctrl high-z update sram output
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 28 of 34 october 6, 2011 boundary scan register status of output pins cq, cq# and dq instructions sram status boundary scan register status note cq,cq# dq extest read (low-z) pad pad nop (high-z) pad pad idcode read (low-z) ? ? no definition nop (high-z) ? ? sample-z read (low-z) pad pad nop (high-z) pad pad sample read (low-z) internal internal nop (high-z) internal pad bypass read (low-z) ? ? no definition nop (high-z) ? ? remark the boundary scan register st atuses during execution each instruction vary according to th e instruction code and sram operation mode. there are two statuses: pad : contents of the output pin (ddr pad) are captured in the ?capture register? in the boundary scan register. internal : contents of the sram internal output ?sram output? are captured in the ?capture register? in the boundary scan register. pad internal sram output driver update register ddr pad high-z jtag ctrl capture register sram output boundary scan register
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 29 of 34 october 6, 2011 tap controller state diagram test-logic-reset run-test / idle select-dr-scan capture-dr capture-ir shift-dr exit1-dr pause-dr exit2-dr update-dr update-ir exit2-ir pause-ir exit1-ir shift-ir select-ir-scan 0 0 0 1 0 1 1 0 0 1 0 1 1 0 0 0 0 10 10 11 1 0 1 1 0 1 0 11 disabling the test access port it is possible to use this device without utilizing the ta p. to disable the tap controller without interfering with normal operation of the device, tck must be tied to v ss to preclude mid level inputs. tdi and tms may be left open but fix them to v dd via a resistor of about 1 k when the tap controller is not used. tdo should be left unconnected also when the tap controller is not used.
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 30 of 34 october 6, 2011 test logic operation (instruction scan) tck controller state tdi tms tdo test-logic-reset run-test/idle select-dr-scan select-ir-scan capture-ir shift-ir exit1-ir pause-ir exit2-ir shift-ir exit1-ir update-ir run-test/idle idcode instruction register state new instruction output inactive
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 31 of 34 october 6, 2011 test logic (data scan) controller state tdi tms tdo run-test/idle select-dr-scan capture-dr shift-dr exit1-dr pause-dr exit2-dr shift-dr exit1-dr update-dr test-logic-reset instruction instruction register state idcode run-test/idle select-dr-scan select-ir-scan output inactive tck
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 32 of 34 october 6, 2011 package dimensions 165-pin plastic bga(13x15) item dimensions d e w a a1 a2 e 13.00 0.10 15.00 0.10 0.30 0.37 0.05 ? 0.05 0.10 1.35 0.11 0.98 1.00 (unit:mm) 0.15 0.25 1.50 0.50 s e y1 s a a1 a2 s y s x bab m s wa s wb ze zd index mark a b 1 2 3 4 5 6 7 8 9 10 11 a b c d e f g h j k l m n p r e d x y y1 zd ze b 0.50 p165f5-100-eq3 + 0.10
pd44164182b, pd44164362b r10ds0014ej0200 rev.2.00 page 33 of 34 october 6, 2011 recommended soldering condition please consult with our sales offices for soldering conditions of these products. types of surface mount devices pd44164182bf5-eq3 : 165-pin plastic bga (13 x 15) pd44164362bf5-eq3 : 165-pin plastic bga (13 x 15) quality grade ? a quality grade of the products is ?standard?. ? anti-radioactive design is not implemented in the products. ? semiconductor devices have the possibility of unexpected defects by affection of cosmic ray that reach to the ground and so forth.
all trademarks and registered trademarks are t he property of their respective owners. c - 34 revision history pd44164182b, pd44164362b description rev. date page summary 1st edition ?10.02.01 - new preliminary data sheet rev.0.02 ?10.08.18 p13 dc characterist ics (modification, spec of i dd and i sb1 ) p14 thermal characteristics (modification, spec) rev.1.00 ?10.12.13 p30 package dimen sions (modification, dimensions) throughout preliminary data sheet ? data sheet rev.2.00 ?11.10.06 th roughout add lead and the extended temperature operation product
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"specific": aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or syst ems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct thr eat to human life. 8. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas el ectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design . please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compati bility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of renes as electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2880 scott boulevard santa clara, ca 95050-2554, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 7f, no. 363 fu shing north road taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 1 harbourfront avenue, #06-10, keppel bay tower, singapore 098632 tel: +65-6213-0200, fax: +65-6278-8001 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 11f., samik lavied' or bldg., 720-2 yeoksam-dong, kangnam-ku, seoul 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2011 renesas electronics corporation. all rights reserved. colophon 1.0

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